SN7002N sipmos small-signal-transistor product summary v ds 60 v r ds(on) 5 w i d 0.2 a feature n-channel enhancement mode logic level d v /d t rated sot-23 gate pin1 drain pin 3 source pin 2 marking ssn ssn type package ordering code tape and reel information SN7002N sot-23 q67042-s4185 e6327: 3000 pcs/reel SN7002N sot-23 q67042-s4192 e6433: 10000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.2 0.16 a pulsed drain current t a =25c i d puls 0.8 reverse diode d v /d t i s =0.2a, v ds =48v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1 power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimal footprint r thja - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 60 - - v gate threshold voltage, v gs = v ds i d =26a v gs(th) 0.8 1.4 1.8 zero gate voltage drain current v ds =60v, v gs =0, t j =25c v ds =60v, v gs =0, t j =150c i dss - - - - 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - - 10 na drain-source on-state resistance v gs =4.5v, i d =0.17a r ds(on) - 3.9 7.5 w drain-source on-state resistance v gs =10v, i d =0.5a r ds(on) - 2.5 5 SN7002N product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =0.16a 0.09 0.17 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 34 45 pf output capacitance c oss - 7.2 9.6 reverse transfer capacitance c rss - 2.8 4.2 turn-on delay time t d(on) v dd =30v, v gs =10v, i d =0.5a, r g =6 w - 2.4 3.6 ns rise time t r - 3.2 4.8 turn-off delay time t d(off) - 5.3 8 fall time t f - 3.6 5.4 gate charge characteristics gate to source charge q gs v dd =48v, i d =0.5a - 0.14 0.21 nc gate to drain charge q gd - 0.42 0.63 gate charge total q g v dd =48v, i d =0.5a, v gs =0 to 10v - 1 1.5 gate plateau voltage v (plateau) v dd =48v, i d = 0.5 a - 4.5 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.2 a inv. diode direct current, pulsed i sm - - 0.8 inverse diode forward voltage v sd v gs =0, i f = i s - 0.83 1.2 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 14.2 21.3 ns reverse recovery charge q rr - 5.9 8.8 nc SN7002N product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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